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| fermionics opto-technology part number 1 anode 2 cathode 3 case (dimensions in inches) description dimensional outline large area ingaas pin photodiodes FD1500W diameter of active area=1.5 mm very high shunt resistance devices are available upon request. absolute maximum ratings (t=25c) parameter rating units storage temperature -40 to +100 c operating temperature -40 to +85 c forward current 100 ma reverse current 20 ma reverse voltage 2 v optical and electric al characteristics (t=25c) parameter symbol test conditions min typ max units = 850 nm 0.10 0.20 - responsivity r = 1300 nm 0.80 0.90 - a /w = 1550 nm 0.85 0.95 - shunt resistance r v =0v 2 10 - m ? capacitance c v =0v - 300 450 p f s r r large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. high spectral response in the region 800 nm to 1700 nm. the photosensitive area is 1.5 mm in diameter. planar-passivated device structure. retour page principale
fermionics opto-technology part number fig. 1 spectral response (r vs. ) reverse voltage v r (v) fig. 3 capacitance vs. reverse voltage reverse voltage v r (v) fig. 2 dark current vs. reverse voltage avelengt (n) responsivit r () dark current d () capacitance c (pf) c crcrscs arge rea nas otoioes fd1 .1 .1 .1 1 1 1 12 1 1 1 1 1 1 123 1 1 1 1 123 |
Price & Availability of FD1500W
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